RIE etching is combinations of chemical and kinetic etching that can produce very anisotropic etch profiles. Ours is used primarily for silicon and silicon dioxide etching. Our RIE is found in room 365 of ASTeCC building.
Reactive ion etching (RIE) is an etching technology used in microfabrication. It uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure (vacuum) by an electromagnetic field. High-energy ions from the plasma attack the wafer surface and react with it
Other types of RIE systems exist, including inductively coupled plasma (ICP) RIE. In this type of system, the plasma is generated with an RF powered magnetic field. Very high plasma densities can be achieved, though etch profiles tend to be more isotropic.
A combination of parallel plate and inductively coupled plasma RIE is possible. In this system, the ICP is employed as a high density source of ions which increases the etch rate, whereas a separate RF bias is applied to the substrate (silicon wafer) to create directional electric fields near the substrate to achieve more anisotropic etch profiles.
Method of operation
In each cycle of the field, the electrons are electrically accelerated up and down in the chamber, sometimes striking both the upper wall of the chamber and the wafer platter. At the same time, the much more massive ions move relatively little in response to the RF electric field. When electrons are absorbed into the chamber walls they are simply fed out to ground and do not alter the electronic state of the system. However, electrons absorbed into the wafer platter cause the platter to build up charge due to its DC isolation. This charge build up develops a large negative voltage on the platter, typically around a few hundred volts. The plasma itself develops a slightly positive charge due to the higher concentration of positive ions compared to free electrons.
Because of the large voltage difference, positive ions tend to drift toward the wafer platter, where they collide with the samples to be etched. The ions react chemically with the materials on the surface of the samples, but can also knock off (sputter) some material by transferring some of their kinetic energy. Due to the mostly vertical delivery of reactive ions, reactive ion etching can produce very anisotropic etch profiles, which contrast with the typically isotropic profiles of wet chemical etching.
Etch conditions in an RIE system depend strongly on the many process parameters, such as pressure, gas flows, and RF power. A modified version of RIE is deep reactive-ion etching, used to excavate deep features.
"Reactive-ion etching." Wikipedia, The Free Encyclopedia. 12 Dec 2007, 01:10 UTC. Wikimedia Foundation, Inc. 13 Feb 2008 <http://en.wikipedia.org/w/index.php?title=Reactive-ion_etching&oldid=177337180>.